p age:p2-p1 plastic-encapsulate transistors features complimentary to pxt8050 collector current: i c =1.5a marking : y2 maximum ratings (ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -5 v collector current -continuous i c -1500 ma collector power dissipation p c 1000 mw junction temperature t j 150 storage temperature t stg -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c = 100 a, i e =0 -40 v collector-emitter breakdown voltage v ceo i c = 0.1ma, i b =0 -25 v emitter - base breakd o w n v o l t age v ebo i e = 100 a, c =0 - 5 v collector cut-off current i cbo v cb = 40 v , i e =0 -0.1 a collector cut-off current i ceo v ce = 20 v , i b =0 -0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 -0.1 a dc current gain h fe(1) v ce = -1v, i c = -100ma 85 400 h f e(2) v ce = -1v, i c = -800ma 50 collector-emitter saturation voltage v ce (sat) i c = -800 ma, i b =-80ma -0.5 v base-emitter saturation voltage v be (sat) i c =-800ma, i b =-80ma -1.2 v base - emitter v ol t age v be v ce = - 1 v , i c = - 10ma - 1 v base - emitter posit i v e f a v or v o l t age v be f i b = - 1 a - 1. 5 v transition frequency f t v ce =-10v,i c =-50ma,f=30mhz 100 mhz output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 pf classification of hfe rank b c d d1 r ange 85-160 120-200 160-300 300-400 1. base 2. collecto sot-89 3. emitter (pnp) PXT8550 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
page:p2-p2 plastic-encapsulate transistors typical characteristics PXT8550 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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